Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya

Under the application of a back-gate voltage, the three-terminal Hanle-effect curves, i.e., spin accumulation signals, are clearly observed. The magnitude of spin accumulation signals can be reduced with increasing the gate voltage.

Appl. Phys. Lett. 99, 132511 (2011)